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Monolithic 3D Provides an Attractive Path to…

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Monolithic 3D Provides an Attractive Path to…

2x density improvement vs. NAND, with similar number of litho steps. 1 million cycles, higher performance. Ion-cut vs. other types of stacked Si. ... poly Si 3D doesn’t work for DRAM (unlike NAND flash) due to leakage. Scalability. MonolithIC 3D Inc. Patents Pending. Scalability.


Date added: May 19, 2013 - Views: 6

Brazil Higher Education Mission - Center for Excellence in ...

DRAM vs. NAND. DRAM: provides temporary data retention. Volatile (no power no data) Needs refresh (leaky) Short term. Used in computers, servers, cars, cell . phones and many other devices. (Data from slow hard drive is transferred to DRAM for easy access by fast CPU)


Date added: April 23, 2014 - Views: 5

Download It - Monolithic 3D Inc., the Next Generation 3D-IC ...

MonolithIC 3D Flash vs. Conventional NAND vs. BiCS. MonolithIC. 3D Flash. 4x improvement in density at similar number of litho steps. Manufacturable. ... DRAM production @ 90nm, 60nm, 50nm nodes. Longer channel length low leakage, at same footprint . J. Kim, et al. Samsung, VLSI 2003.


Date added: September 11, 2012 - Views: 47

CMOS Logic Design with Independent-gate FinFETs

... NAND Gates SG -mode NAND IG-mode ... Styles Unusual Dual-Vdd/Dual-Vth Circuits Architectural Impact Other ongoing work Conclusions FinFET SRAM and Embedded DRAM ... FinFETs Router Leakage Power vs. Temp. Talk Outline FinFET SRAM and Embedded DRAM Design Extension of CACTI for FinFETs FPGA vs ...


Date added: October 13, 2011 - Views: 287

Digital Devices - Mississippi State University

... Erase NAND Flash NAND vs NOR Flash NAND vs. NOR Flash NAND denser than NOR because of smaller cell size preferred for data memory storage ... and unlimited writes Could also replace SRAM/DRAM use in embedded systems. MRAM Cell MRAM Cell ...


Date added: January 16, 2014 - Views: 2

Micron Technology, Inc. - Little Investment Bankers of Rutgers

Dramatic decline in ASP of DRAM and NAND is continuous – decreased 52% and 56% in 2009, respectively. Due to huge supply surpluses. Further decline in global economic activity. Litigation – Outstanding lawsuits over price fixing.


Date added: May 15, 2013 - Views: 3

Introduction to CMOS Logic Circuits - Boston University

... CMOS NAND Several devices in series each with effective channel length Leff can be viewed as a single device of channel length equal to the combined channel lengths of the separate series devices e.g. 3 input NAND: ... especially pulsed DOMINO and NORA logic as well as in DRAM operation.


Date added: September 21, 2011 - Views: 106

CMOS Technology Logic Circuit Structures - Boston University

Sequential CMOS and NMOS Logic Circuits Sequential logic circuits contain one or more combinational logic blocks along with memory in a feedback loop with the logic


Date added: October 12, 2011 - Views: 100

A Space-Efficient Flash Translation Layer for Compactflash ...

Faster erase and write time NAND vs. NOR NAND Flash Memory Organization of NAND flash memory Small-block flash memory ... The disk that uses the semiconductor as storage DRAM-based Flash-based P-ATA / S-ATA interface FTL NAND flash memory Target markets Enterprise server storage ...


Date added: October 22, 2011 - Views: 35

Systemarchitektur - TUM

DRAM cell Architecture of a DRAM cell Read destroys information, therefore it has to be written back. Cycle time ... Isolation is damaged by reset. NOR vs NAND NAND more compact since less wires, although more transistors read: offset power for other FETs NOR Single and Multi Level Cells ...


Date added: December 11, 2013 - Views: 8

Samsung - Professor Charles C.Wu

Samsung Electronics and the Chinese Threat MBA 290G Fall ‘07 Prof Charles Wu TEAM 9 Alex Mehr, Bindiya Jadhwani, Kerem Tutuncu, Lucian Popa, Rodrigo Fonseca, Uttara Parikh


Date added: September 13, 2011 - Views: 74

Subsystems 3 - Wayne Wolf

DRAM; Flash. Image sensors. FPGAs. PLAs. ... Static CMOS gate vs. LUT Number of transistors: NAND/NOR gate has 2n transistors. 4-input LUT has 128 transistors in SRAM, 96 in multiplexer. Delay: 4-input NAND gate has 9t delay. SRAM decoding has 21t delay.


Date added: September 18, 2012 - Views: 9

Product Longevity Program - SPECTRUM SALES | THE LEADING ...

August 7, 2012. Using “X” designator in part number to indicate PLP-specific parts. All PLP DRAM part numbers use “X” designator. 1Gb optimized NAND 34nm PLP devices are already using PLP “X” designator


Date added: December 11, 2013 - Views: 5

PowerPoint Presentation

FEATURES. Arxcis-NV Technical Overview. DRAM Capacities: 2GB, 4GB, 8GB. DDR3 1.5V 1333MT/s. NAND 2x DRAM Capacity. Multiple Host Trigger Methods (incl ADR)


Date added: September 2, 2014 - Views: 2

This Is the Title of the Presentation

NOR vs. NAND. Serial NOR 512K-1Gb. Parallel NOR 4Mb-2Gb. SLC NAND 128Mb-64GB. MLC NAND 2GB-128GB. Managed NAND 2GB-64GB. ... The DRAM uses a capacitor as its storage mechanism, hence . dynamic. The capacitor is either charged to a full V DD level (Logic 1) or Ground (Logic 0).


Date added: December 14, 2013 - Views: 14

Revisiting Widely Held SSD Expectations and Rethinking System ...

DRAM Buffer. Faster than HDD. Less overheads. We are carefully using them!! Reads. Writes. Read Cache. Memory Extension. Read-Only Storage. Burst Buffer. Checkpointing. Swap/Hibernation Management. Virtual Memory. Then, why do we need to rethink? NAND Core. Packaging. Architecture. Firmware/OS ...


Date added: March 26, 2014 - Views: 1

PowerPoint プレゼンテーション - University of York

Advanced Information Storage 12 Atsufumi Hirohata Department of Electronics 17:00 11/November/2013 Monday (AEW 105) * * * * * * * * * * * * * * Quick Review over the Last Lecture Flash memory : NOR-type 1 byte high-speed read-out Low writing speed Difficult to integrate NAND-type High writing ...


Date added: November 11, 2013 - Views: 3

Flash Memory Technology Direction

NAND Solid State Storage Devices are ready for deployment in many applications. ... System DRAM. PCI E-(optionally on MCH) Cache. Add-in. Card. Build Option 1 . PC Add-in Card- ... each block would have been programmed less than 3 times (vs. the 10,800 cycles when you cycle the same block)


Date added: October 7, 2011 - Views: 21

PowerPoint Presentation

Digital Logic Test Data Volume DRAM Trends vs. Fcst Speculative beyond DDR3 Cell size remains 6F2 Increased I/O rate in 2007 to support revised DDR4 DDR6 model Density aligned to litho roadmap NAND Trends vs. Fcst Density growth has flattened slightly Litho has caught up 4F2 Cell size (SBC) 3 ...


Date added: April 24, 2012 - Views: 16

Transistors and Logic Gates - University of Wisconsin–Madison

... Static RAM (SRAM) fast, maintains data without power Dynamic RAM (DRAM) slower but denser ... inputs and current state State Machine Combinational Logic Circuit Storage Elements Inputs Outputs 3-* Combinational vs. Sequential Two types of ... * * * * * * * * NAND and NOR are not ...


Date added: December 12, 2011 - Views: 50

Advanced SoC Architectures for Embedded Systems

... then read data and re-write it (to the same or other block) Similar to self refresh in DRAM [Source: Micron, 2008] ESA, POSTECH, 2010 Agenda NAND Flash memory Program and reliability Flash ... Intel SSD NOR vs. NAND Summary Area Efficiency NAND Flash Memory Circuit NAND Program ...


Date added: November 1, 2011 - Views: 26

Transistors and Logic Gates

... required for reproduction or display. * * If there's time, perhaps discuss how all gates can be implemented with NAND ... OR the results of the AND gates. 3-* Combinational vs ... (Random Access Memory) Static RAM (SRAM) fast, maintains data as long as power applied Dynamic RAM (DRAM ...


Date added: September 9, 2013 - Views: 1

Use of PCM in Computer Systems: an End-to-End Exploration

DRAM scaling is hard (no known solutions at < 20nm) DRAM consumes more power than wanted, even at idle time. ... More scalable than NAND (~10nm vs. ~20nm) Much simpler management (e.g., in-place update) Potentially good bandwidth. Fast paging storage?


Date added: May 6, 2013 - Views: 7

Transistors and Logic Gates - UNC A

3-* Combinational vs. Sequential Two types of “combination” locks 4 1 8 4 ... perhaps discuss how all gates can be implemented with NAND (or ... (Random Access Memory) Static RAM (SRAM) fast, maintains data as long as power applied Dynamic RAM (DRAM) slower but denser, bit storage ...


Date added: November 12, 2013 - Views: 5

To Avoid Thermal Attack - Pennsylvania State University

Disk Drive vs . Flash Memory MOS ... Addressable Unit NAND Flash Technology Comparison for Different Memory Types Outline Flash Memory Technology NAND vs. NOR Block Mapping Schemes Emulating Disk with Flash ... (by buffering and reordering writes) DRAM Management LRU block replacement Flash ...


Date added: December 11, 2013 - Views: 6

CSE 477. VLSI Systems Design

... DRAM [Adapted from Rabaey’s Digital Integrated Circuits, Second Edition, ©2003 J. Rabaey, A ... more power (3 WL switch vs. 1 WL in NAND) Essentially a 2**k input multiplexer Can run the NOR decoder while the row decoder and core are working – so only have 1 extra transistor in ...


Date added: February 8, 2013 - Views: 20

Semiconductor Memories - Sharif

... Erase Basic Operations in a NOR Flash Memory― Write Basic Operations in a NOR Flash Memory― Read NAND Flash Memory NAND Flash ... Decreasing Word Line Delay Resistance-load SRAM Cell SRAM Characteristics Introduction Non-volatile memories RAM SRAM DRAM 3-Transistor DRAM Cell ...


Date added: May 11, 2013 - Views: 30

ITRS Update - International Technology Roadmap for Semiconductors

... SICAS Capacity analysis update (23,24) DRAM and Flash Functions/Chip 2009 ITRS vs. 2011 ITRS (2 foils) * * 2011 ITRS Figure 3 2012 update; add 3D Flash layer-range ... 2011-2026 PIDS NAND Flash Multi-Layer 3D Model vs. “Slower” Poly half-pitch Dimensional Reduction Rate ...


Date added: December 29, 2012 - Views: 77

PowerPoint Presentation

... Dynamic Random Access Memory RAM memory: data storage (writing) and ... Imbalance between supply and demand DRAM market growth is correlate to the growth in the world economy FLASH Basic NOR vs NAND Flash Read /Write /Erase Mechanism 2006 Market Trends Chip production increased 12 ...


Date added: September 19, 2011 - Views: 47

Advanced SoC Architectures for Embedded Systems

Similar to self refresh in DRAM [Source: Micron, 2008] ESA, POSTECH, 2010. Agenda. NAND Flash memory. Internal operations and reliability. ... NAND vs. NOR: Required Pins. NAND utilizes multiplexed I/O (I/O[7:0] in the table) for commands and data.


Date added: May 2, 2013 - Views: 7

Interface Part II

If more than one are present, then all must be 0 in order to perform a read or write. SRAM vs. DRAM SRAMs ... Ex. Memory Address Decoding This 2KB memory segment maps into the reset location of the 8086/8088 (FFFF0H). NAND gate ... Write Cycle BUS Buffering and Latching Basic ...


Date added: September 17, 2011 - Views: 34

Transistors and Logic Gates

Chapter 3 Digital Logic Structures


Date added: May 17, 2013 - Views: 10

Random Access Memory - Anadolu Üniversitesi

DRAM Cell DRAM Cell Read DRAM Cell Write DRAM Bit Slice DRAM Including Refresh Logic Dynamic vs. static memory In practice, ... A latch can be made with only two NAND or two NOR gates, but a flip-flop requires at least twice that much hardware. In general, ...


Date added: July 19, 2012 - Views: 39

No Slide Title

... (product of sums) NAND-NAND (sum of products ... (DRAM) Initialized in its ... V DD BL BL SE SE Charge-Redistribution Amplifier Concept M 2 M 3 M 1 V L V S V ref C small C large Transient Response Vs prechrged to VDD and VL to Vref-Vth M1 is cut off When M2 pulls down M1 conducts and Vs is ...


Date added: November 28, 2013 - Views: 19

Title Tahoma/36ft/Bold/(0,0,204) - Dell

CPU, DRAM, and HDD. Everything is speeding up.. Except the HDD. Processor: Multi-core. Higher bandwidth . Memory: Larger footprint. Higher bandwidth. ... NAND Characteristics. P/E Cycles. WAF. TBW / WPD. SMART. Host Interface. Sustained vs. Peak Performance. Benchmarking. SSD Influencers.


Date added: October 4, 2014 - Views: 1

Evolution of implementation technologies - EECS Instructional ...

Flip-flops vs. latches revisited ... Simple system design (mostly software development) Memory chips (DRAM, SRAM) Application specific ICs (ASICs ... (Metal Oxide Semiconductor Field Effect Transistor) Transistor-level Logic Circuits Inverter (NOT gate): NAND gate Note : out ...


Date added: May 5, 2013 - Views: 9

Solid-state drive (SSD)

NAND Flash memory. Flash Translation Layer (FTL) Block storage interface. Persistent. ... DRAM buffer cache. Read cache + write-ahead log. Capacity. Performance $$$$ $ Other options? ... Read IOPS vs. GB is the key tradeoff. Workload IOPS vs GB. GB Trace volumes 125.00656332800024


Date added: May 5, 2013 - Views: 7

Lecture 20 DRAMs - University of British Columbia

... Lecture Outline SRAM CAM DRAM ROM EPROM/ EEPROM Flash Applications Embedded RAM ... Read-Only Memories NOR Array NAND Array Applications Initial Boot code or BIOS ... Gnd Gnd Gnd Gnd Gnd Gnd Vpp Gnd Gnd Gnd Gnd Gnd Gnd Gnd Gnd Gnd Gnd Vs Gnd Write: Hot-carriers Erase: FN ...


Date added: March 12, 2012 - Views: 26

Lecture 3: R4000 + Intro to ILP - Computer Science Division ...

Graduate Computer Architecture Lecture 22 Synchronization (con’t) Memory Technology Error Correction Codes April 18th, 2010 John Kubiatowicz Electrical Engineering and Computer Sciences


Date added: May 3, 2013 - Views: 10

Lecture1 Introduction - University of California, Berkeley

EECS 150 - Components and Design Techniques for Digital Systems Lec 27 – Summary (whirlwind) 12-9-04 David Culler Electrical Engineering and Computer Sciences


Date added: February 26, 2012 - Views: 45

Lecture 3: R4000 + Intro to ILP - Soda Hall

No refresh (6 transistors/bit vs. 1 transistor. Size: DRAM/SRAM ­ 4-8, Cost/Cycle time: SRAM/DRAM ­ 8-16. Core Memories (1950s & 60s) ... NAND: denser, must be read and written in blocks. NOR: much less dense, fast to read and write. Samsung 2007:


Date added: February 27, 2014 - Views: 3

Design and Testing of Semiconductor Memories - VLSI

Semiconductor Memory Design (SRAM & DRAM) Kaushik Saha Contact: [email protected], mobile-98110-64398 Understanding the Memory Trade The memory market is the most Volatile Cost Competitive Innovative in the IC trade Classification of Memories Feature Comparison Between Memory Types Memory ...


Date added: September 16, 2011 - Views: 108

PowerPoint プレゼンテーション - University of York

NAND-Flash Writing and Erasing Operation Writing operation : Erasing operation : ... Flash Memory vs DRAM Comparisons between flash memory and DRAM : ...


Date added: December 5, 2013 - Views: 6

Exaflops or Bust

DRAM – Reduced-memory exascale. Overfetch, leakage, refresh, scrubbing. Giridhar et al, SC 13: 100PB can be achieved at 4.7 MW. ... 3D NAND Flash is BIG. 128Gb chips reported (vs. 4-8 Gb for DRAM). But .. Characteristics. Flash in Exascale Systems.


Date added: June 2, 2014 - Views: 1

Trumping the Multicore Memory Hierarchy with Hi-Spade

* Relative Latencies: 10ns 100ns 1us 10us 100us 1ms 10ms NAND Flash PCM DRAM Hard Disk NAND Flash PCM DRAM Hard Disk Read Write Challenge: ...


Date added: December 12, 2013 - Views: 3

Content Addressable Memories - Sharif

Content Addressable Memories Cell Design and Peripheral Circuits CAM: Introduction CAM vs. RAM CAM: Introduction Binary CAM Cell ML pre-charged to VDD Match: ML remains at VDD Mismatch: ML discharges CAM: Introduction Ternary CAM (TCAM) CAM: Introduction TCAM Cell Global Masking SLs Local ...


Date added: May 21, 2013 - Views: 3

PowerPoint Presentation: EE5324 Memory Design - Kia Bazargan

Cs / (Cs+CBL) Dynamic RAM 1-Transistor Cell: Observations DRAM memory cell is single-ended Read operation is destructive Unlike 3T cell, ... ROM Cells: Summary Mask programmability Precharged vs. pseudo-nMos NAND cell, NOR cell Area Speed Other types: EEPROM, etc. Outline Registers ...


Date added: September 20, 2011 - Views: 46

投影片 1 - University of California, Los Angeles

As shown by this DRAM roadmap from Samsung, ... Frictionless Vehicles Lab-on-a-chip Molecular Sensor Nonobots Self-illuminating Highway CMOS Image Sensor Memory SRAM/DRAM NAND Application Processor /Baseband CPU GPU FPGA MEMS ...


Date added: October 22, 2011 - Views: 200

Solid State Storage Deep Dive - SQL Server Input/Output ...

NAND is serial at the cell level. NAND writes significantly faster than NOR. NAND erases much faster than NOR--4 ms vs. 5 s. Serial array of transistors. Each transistor holds 1 ... Some manufacturers off set this with a large DRAM buffer and also may allow you to change the size of the over ...


Date added: May 3, 2013 - Views: 14

Testing in the Fourth Dimension

CMOS Nanoelectronics Durga Misra Electrical and Computer Engineering Department NJIT Newark, NJ 07102 http://web.njit.edu/~dmisra/ [email protected]


Date added: December 6, 2013 - Views: 3